Cr, Tm, Ho: YAG レーザー結晶
仕様
Parameter
| Doped Concentration | Ho:0.3~0.4at% Cr:0.3~1.2at% Tm:5~6at% |
| Wavefront Distortion | <λ/4@632nm |
| Extinction Ratio | ≥25 dB |
| Rod Sizes | Diameter:3~6mm,Length:50~120mm |
| Dimensional Tolerances | Diameter:+0.00/-0.05mm, Length: ± 0.5mm |
| Barrel Finish | 50-80 micro-inch (RMS) |
| Parallelism | ≤30″ |
| Perpendicularity | ≤5′ |
| Flatness | λ/10@ 633 nm |
| Surface Quality | 10/5 Scratch / Digper MIL-O-1380A |
| Chamfer | 0.006″±0.002″ at 45°± 5° |
| AR Coating Reflectivity | ≤ 0.25% (@2094nm) |
| Structure | Cubic |
| Lattice Constant | 12.01Å |
| Melting Point | 1970°C |
| Density | 4.56g/cm3 |
| Orientation | <111> or <100]> crystalline within 5° |
| Thermal Expansion | 7.8×10-6 /K |
| Thermal Conductivity | 14W/m/K, 20°C；10.5W/m/K, 100°C |
| Mohs Hardness | 8.5 |
| Dielectric Constant | 11.7 |
| Laser Transition | 5I7 → 5I8 |
| Laser Wavelength | 2.094 µm |
| Photon Energy | 9.55 x 10-20 J |
| Emission Cross Section | 7 x 10-21 cm2 |
| Fluorescence Lifetime | 8.5 ms |
| Index of Refraction | 1.80 @2.08 µm |
| Aperture | >90% |
| Absorption Linewidth | 4 nm |
| Diode Pump Band | 781 nm |
| Major Pump Band | 400~800 nm |
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